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IPP60R120P7(2017) Даташит - Infineon Technologies

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IPP60R120P7

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14 Pages

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1.3 MB

производитель
Infineon
Infineon Technologies 

600V CoolMOS™ P7 Power Transistor

The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS P6 series.


FEATUREs
• Suitable for hard and soft switching (PFC and LLC) due to an outstanding
   commutation ruggedness
• Significant reduction of switching and conduction losses
• Excellent ESD robustness > 2kV(HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a
   low RDS(on)*A (below 1Ohm*mm²)
• Large portfolio with granular RDS(on) selection qualified for avariety of
   industrial and consumer grade applications according to JEDEC
   (J-STD20 and JESD22)


Benefits
• Ease of use and fast design-in through low ringing tendency and usage
   across PFC and PWM stages
• Simplified thermal management due to low switching and conduction
   losses
• Increased power density solutions enabled by using products with
   smaller footprint and higher manufacturing quality due to >2kV ESD
   protection

Potential applications
   PFC stages, hard switching PWM stages and resonant switching stages
   for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom
   and UPS.


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