Номер в каталоге
ILB03N60
Компоненты Описание
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15 Pages
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Infineon Technologies
ILB03N60 Даташит - Infineon Technologies
Infineon Technologies
LightMOS Power Transistor
• New high voltage technology designed for ZVS-switching in lamp
ballasts
• IGBT with integrated reverse diode
• 4A current rating for reverse diode
• Up to 10 times lower gate capacitance than MOSFET
• Avalanche rated
• 150°C operating temperature
• FullPak isolates 2.5 kV AC (1 min.)
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