IHW30N90R Даташит - Infineon Technologies
Номер в каталоге
IHW30N90R
производитель

Infineon Technologies
Features:
• 1.5V typical saturation voltage of IGBT
• Trench and Fieldstop technology for 900 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
APPLICATIONs:
• Microwave Oven
• Soft Switching Applications for ZCS
Номер в каталоге
Компоненты Описание
View
производитель
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse-Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2015_03 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse Conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2009 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode ( Rev : 2013 )
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies
Reverse conducting IGBT with monolithic body diode
Infineon Technologies