4M × 72-Bit Dynamic RAM Module (ECC - Module )

The HYM 72V4000/10GS-50/-60 is a 32 MByte DRAM module organized as 4 194 430 words by 72-bit in a 168-pin, dual read-out, single-in-line package comprising eighteen HYB 3116400BT/BJ 4M × 4 DRAMs in 300 mil wide TSOPII or SOJ- packages mounted together with ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using BiCMOS buffers/line drivers.

• 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications
• Fast access and cycle time
   50 ns access time
   90 ns cycle time (-50 version)
   60 ns access time
   110 ns cycle time (-60 version)
• Fast page mode capability with
   35 ns cycle time (-50 version)
   40 ns cycle time (-60 version)
• Single + 3.3V (± 0.3V) supply
• Low power dissipation
   max. 6480 mW active (-50 version)
   max. 5832 mW active (-60 version)
   CMOS – 108 mW standby
   LVTTL – 180 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully LVTTL & LVCMOS compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes eighteen 4M × 4 -DRAMs and four BiCMOS 8-bit buffers/line drivers LV244A
• Two versions : HYM 72V4000GS with TSOPII-components (4 mm thickness)
                           HYM 72V4010GS with SOJ-components (9 mm thickness)
• 4096 refresh cycles / 64 ms with 12 / 10 addressing
• Gold contact pad
• Double sided module with 25.35 mm (1000 mil) height