
Hynix Semiconductor
DESCRIPTION
The HYNIX HY27(U/S)SXX561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561M
Memory Cell Array
- 256Mbit = 528 Bytes x 32 Pages x 2,048 Blocks
PAGE SIZE
- x8 device : (512 + 16 spare) Bytes : HY27US08561M
- x16 device: (256 + 8 spare) Words : HY27US16561M
BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
- Random access: 10us (max)
- Sequential access: 50ns (min)
- Page program time: 200us (typ)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE DONT CARE OPTION
- Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- HY27US(08/16)561M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27US(08/16)561M-T (Lead)
- HY27US(08/16)561M-TP (Lead Free)
- HY27US08561M-V(P) : 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27US08561M-V (Lead)
- HY27US08561M-VP (Lead Free)
- HY27(U/S)S(08/16)561M-F(P) : 63-Ball FBGA (9.0 x 11 x 1.0 mm)
- HY27US(08/16)561M-F (Lead)
- HY27US(08/16)561M-FP (Lead Free)
- HY27SS(08/16)561M-F (Lead)
- HY27SS(08/16)561M-FP (Lead Free)