Номер в каталоге
HVV1012-100
Компоненты Описание
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2 Pages
File Size
795.4 kB
производитель
HVVi Semiconductors, Inc.
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HVV1012-100 Даташит - HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
DESCRIPTION
The high power HVV1012-100 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed avionics application operating over the frequency range from 1025MHz to 1150MHz.
FEATURES
• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage
Номер в каталоге
Компоненты Описание
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производитель
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