DESCRIPTION
The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz. The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
FEATURES
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
Номер в каталоге
Компоненты Описание
View
производитель
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty for Ground Based Radar Applications
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty ( Rev : V2 )
HVVi Semiconductors, Inc.
1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz ( Rev : V2 )
Microsemi Corporation
1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz
Microsemi Corporation
L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
HVVi Semiconductors, Inc.
Radar Pulsed Power Transistor, 75W, 300~s Pulse, 10% Duty 2.7 - 3.1 GHz
Tyco Electronics
Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz
Tyco Electronics