HN2D01JE Даташит - Toshiba
производитель
Toshiba
Ultra High Speed Switching Application
● The HN2D01JE is composed of 2 independent diodes.
● Low forward voltage : VF (3) = 0.98V (typ.)
● Fast reverse recovery time : trr = 1.6ns (typ.)
● Small total capacitance : CT = 0.5pF (typ.)
Номер в каталоге
Компоненты Описание
View
производитель
TOSHIBA Diode Silicon Epitaxial Planar Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type ( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type ( Rev : 2001 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type ( Rev : 2014 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type ( Rev : 2014 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type ( Rev : 2017 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type ( Rev : 2014 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type ( Rev : 2021 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Planar Type
Toshiba
