Номер в каталоге
HN1B01FDW1T1
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HN1B01FDW1T1 Даташит - ON Semiconductor
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Complementary Dual General Purpose Amplifier Transistor
PNP and NPN Surface Mount
FEATUREs
• High Voltage and High Current: VCEO = 50 V, IC = 200 mA
• High hFE: hFE = 200~400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A
− Machine Model: C
• Pb−Free Package is Available
Номер в каталоге
Компоненты Описание
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производитель
Complementary Dual General Purpose Amplifier Transistor ( Rev : 2010 )
ON Semiconductor
Complementary Dual General Purpose Amplifier Transistor ( Rev : 2005 )
ON Semiconductor
Complementary Dual General Purpose Amplifier Transistor ( Rev : 2006 )
ON Semiconductor
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