H7P0601DL Даташит - Renesas Electronics
Номер в каталоге
H7P0601DL
производитель
Renesas Electronics
Features
• Low on-resistance
RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
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Номер в каталоге
Компоненты Описание
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производитель
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Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
