Description
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.

FEATUREs
■ Compact 4-pin package
■ Current Transfer Ratio: 600% minimum (at IF = 1 mA)
■ High isolation voltage between input and output (5300
   VRMS)
■ UL recognized (File # E90700)

APPLICATIONs
■ Power Supply Monitors
■ Relay Contact Monitor
■ Telephone/Telegraph Line Receiver
■ Twisted Pair Line Receiver
■ Digital Logic/Digital Logic