GT20G101(SM) Даташит - Toshiba
Номер в каталоге
GT20G101(SM)
производитель

Toshiba
STROBE FLASH APPLICATIONS
● High Input Impedance
● Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A)
● Enhancement−Mode
● 20V Gate Drive
Номер в каталоге
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производитель
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : 2002 )
Toshiba