
Giga Semiconductor
Functional Description
The GS8161Z18(T/D)/GS8161Z32(D)/GS8161Z36(T/D) is an 18Mbit Synchronous Static SRAM. GSIs NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.
FEATUREs
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 100-lead TQFP and 165-bump FP-BGA packages