
GeneSiC Semiconductor, Inc.
Silicon Carbide Schottky Diode
FEATUREs
• Gen4 Thin Chip Technology for Low VF
• Enhanced Surge and Avalanche Robustness
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• Low Reverse Leakage Current
• Temperature Independent Fast Switching
• Positive Temperature Coefficient of VF
• Low VF for High Temperature Operation
Advantages
• Improved System Efficiency
• High System Reliability
• Optimal Price Performance
• Reduced Cooling Requirements
• Increased System Power Density
• Zero Reverse Recovery Current
• Easy to Parallel without Thermal Runaway
• Improved System Efficiency
APPLICATIONs
• EV Fast Chargers
• Solar Inverters
• Wind Energy Converters
• Train Auxiliary Power Supplies
• High Frequency Rectifiers
• Switched Mode Power Supplies
• Motor Drives
• Pulsed Power