Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications.

FEATUREs
• BVCEO > 60V
• IC = 3A High Continuous Current
• ICM = 6A Peak Pulse Current
• Low Saturation Voltage VCE(sat) < 300mV @1A
• Complementary PNP Type: FZT751Q
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)