General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

FEATUREs
• -2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability