Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
   
Features
• 4.74A, 700V, RDS(on) = 1.5 Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability