Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
   
Features
• 33A, 150V, RDS(on) = 0.09Ω @VGS = 10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 50pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating