Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge

FEATUREs
• Silicon chip on Direct-Copper-Bond
   substrate
   - high power dissipation
   - isolated mounting surface
   - 2500 V electrical isolation
   - low drain to tab capacitance (< 40 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
   generation
   - high blocking capability
   - lowest resistance
   - avalanche rated for unclamped
      inductive switching (UIS)
   - low thermal resistance
      due to reduced chip thickness
• Enhanced total power density
• HiPerDyn™ FRED
   - consisting of series connected diodes
   - enhanced dynamic behaviour for
      high frequency operation

APPLICATIONs
• Switched mode power supplies
   (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)

Advantages
• Easy assembly:
   no screws or isolation foils required
• Space savings
• High power density
• High reliability