
Cypress Semiconductor
Description
The FM25640B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
FEATUREs
64K bit Ferroelectric Nonvolatile RAM
• Organized as 8,192 x 8 bits
• High Endurance 1 Trillion (1012) Read/Writes
• 38 Year Data Retention
• NoDelay™ Writes
• Advanced high-reliability ferroelectric process
Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz maximum bus frequency
• Direct hardware replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection
Low Power Consumption
• 250 μA Active Current (1 MHz)
• 4 μA (typ.) Standby Current
Industry Standard Configuration
• Industrial Temperature -40°C to +85°C
• 8-pin “Green”/RoHS SOIC (-G)