General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
• 6 A, 30 V. RDS(ON) = 0.028 W @ VGS = 10 V
                RDS(ON) = 0.035 W @ VGS = 4.5 V.
• Fast switching speed.
• Low gate charge (typical 9 nC).
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.