General Description
   This N-Channel Logic Level MOSFET is produced using the advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
   These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
• VDS (V) =30V
• ID= 12 A (VGS = 10V)
• RDS(ON) ＜ 9.5mΩ (VGS=10V)
• RDS(ON) ＜ 13 mΩ (VGS=4.5V)
• Ultra-low gate charge
• High performance trench technology for extremely
   low RDS(ON)
• High power and current handling capability