General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
• –10 A, –20 V. RDS(ON) = 12 mΩ @ VGS = –4.5 V RDS(ON) = 17.5 mΩ @ VGS = –2.5 V
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

APPLICATIONs
• Power management
• Load switch
• Battery protection