General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FEATUREs
• 1.8 A, 30 V. RDS(on) = 0.100 Ω @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V.
• Low gate charge ( 2.1nC typical ).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on).
• High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.

APPLICATIONs
• DC/DC converter
• Load switch
• Motor drives