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FDN359AN Даташит - Fairchild Semiconductor

FDN359AN image

Номер в каталоге
FDN359AN

Компоненты Описание

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page
8 Pages

File Size
234.7 kB

производитель
Fairchild
Fairchild Semiconductor 

General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.


FEATUREs
■ 2.7 A, 30 V.
   RDS(ON) = 0.046 W @ VGS = 10 V
   RDS(ON) = 0.060 W @ VGS = 4.5 V.
■ Very fast switching.
■ Low gate charge (5nC typical).
■ High power version of industry standard SOT-23
   package. Identical pin out to SOT-23 with 30% higher
   power handling capability.

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Компоненты Описание
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