General Description
This Single N-Channel MOSFET has been designed using ON Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.

FEATUREs
■ RDS(on) = 40mΩ
@ VGS = 4.5 V, ID = 5.0A
■ RDS(on) = 50mΩ
@ VGS = 2.5 V, ID = 4.5A
■ Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm
■ Free from halogenated compounds and antimony oxides
■ HBM ESD protection level > 2.5kV typical (Note 3)
■ RoHS Compliant

APPLICATIONs
■ Li-lon Battery Pack