FCPF190N60(2013_03) Даташит - Fairchild Semiconductor
Номер в каталоге
FCPF190N60
производитель

Fairchild Semiconductor
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
FEATUREs
• 650 V @TJ = 150°C
• Max. RDS(on) = 199 mΩ
• Ultra low gate charge (Typ. Qg = 57 nC)
• Low effective output capacitance (Typ. Coss.eff = 160 pF)
• 100% avalanche tested
APPLICATIONs
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-CD Power Supply
Номер в каталоге
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