F5N60 Даташит - PANJIT INTERNATIONAL
производитель

PANJIT INTERNATIONAL
FEATURES
• 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Номер в каталоге
Компоненты Описание
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производитель
600V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2015 )
Diodes Incorporated.
600V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
600V N-Channel Enhancement Mode MOSFET
PANJIT INTERNATIONAL
600V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
8A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
2A 600V N-channel Enhancement Mode Power MOSFET ( Rev : V3 )
Unspecified
8A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
7A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
2A 600V N-channel Enhancement Mode Power MOSFET ( Rev : V2 )
Unspecified
10A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd