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EMG1
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ROHM Semiconductor
EMG1(2012) Даташит - ROHM Semiconductor
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
FEATUREs
1) Built-In Biasing Resistors, R1 = R2 = 22kW.
2) Two DTC124E chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
APPLICATION
Inverter circuit, Interface circuit, Driver circuit
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производитель
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ( Rev : 2013 )
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ( Rev : 2012 )
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ( Rev : 2012 )
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ( Rev : 2012 )
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ( Rev : 2012 )
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ( Rev : 2012 )
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
ROHM Semiconductor
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) ( Rev : 2012 )
ROHM Semiconductor
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