[Excelics]

Low Distortion GaAs Power FET

• +25.0dBm TYPICAL OUTPUT POWER
• 10.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE