DSEP30-06CR(2004) Даташит - IXYS CORPORATION
Номер в каталоге
DSEP30-06CR
производитель

IXYS CORPORATION
Features
• Silicon chip on Direct-Copper-Bond
substrates
- High power dissipation
- Isolated mounting surface
- 2500 V electrical isolation
• Low cathode to tab capacitance (< 25 pF)
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
• Isolated and UL registered E153432
APPLICATIONs
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters and
motor control circuits and PFC circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Номер в каталоге
Компоненты Описание
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производитель
HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface)
IXYS CORPORATION
HiPerFRED™ Epitaxial Diode with soft recovery (Electrically Isolated Back Surface)
IXYS CORPORATION
HiPerDynFRED™ with soft recovery (Electrically Isolated Back Surface)
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HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface
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IXYS CORPORATION
HiPerFRED™ Epitaxial Diode ISOPLUS220™ Electrically Isolated Back Surface
IXYS CORPORATION
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IXYS CORPORATION
HiPerDynFRED™ Epitaxial Diode ISOPLUS220™ Electrically Isolated Back Surface ( Rev : 2001 )
IXYS CORPORATION
HiPerDynFRED™ Epitaxial Diode ISOPLUS220™ Electrically Isolated Back Surface
IXYS CORPORATION
HiPerDynFRED™ Epitaxial Diode ISOPLUS220™ Electrically Isolated Back Surface
IXYS CORPORATION