Номер в каталоге
D961
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Inchange Semiconductor
D961 Даташит - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
• Good Linearity of hFE
• Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A
• Complement to Type 2SB869
APPLICATIONS
• Designed for power switching applications.
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