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D1950 Даташит - Renesas Electronics

2SD1950 image

Номер в каталоге
D1950

Компоненты Описание

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page
6 Pages

File Size
1.7 MB

производитель
Renesas
Renesas Electronics 

DESCRIPTION
The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain.
This is suitable for all kind of driving or muting.


FEATURES
● High DC Current Gain and Good hFE linearity.
   hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A)
● Low Collector Saturation Voltage.
   VCE(sat) = 0.18 V TYP. (IC = 1.0 A, IB = 10 mA)
● High VEBO : VEBO = 15 15V


Номер в каталоге
Компоненты Описание
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NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
Renesas Electronics

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