D1950 Даташит - Renesas Electronics
производитель

Renesas Electronics
DESCRIPTION
The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain.
This is suitable for all kind of driving or muting.
FEATURES
● High DC Current Gain and Good hFE linearity.
hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A)
● Low Collector Saturation Voltage.
VCE(sat) = 0.18 V TYP. (IC = 1.0 A, IB = 10 mA)
● High VEBO : VEBO = 15 15V
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производитель
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NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics