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D1517 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min)
• Good Linearity of hFE
• High Speed Switching
APPLICATIONS
• Designed for power amplifier,power switching applications.
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производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor