CXT5551E(2010) Даташит - Central Semiconductor
производитель

Central Semiconductor
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.
FEATURES:
• High Collector Breakdown Voltage: 250V
• Low Leakage Current: 50nA MAX
• Low Saturation Voltage: 100mV MAX @ 50mA
• Complementary Device: CXT5401E
• SOT-89 Surface Mount Package
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
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производитель
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ( Rev : 2010 )
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ( Rev : 2006 )
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ( Rev : V2 )
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ( Rev : 2003 )
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ( Rev : 2006 )
Central Semiconductor
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
Central Semiconductor