CPD80 Даташит - Central Semiconductor
производитель
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 16 x 16 MILS
Die Thickness 9.0 MILS
Anode Bonding Pad Area 6.5 x 6.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Номер в каталоге
Компоненты Описание
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производитель
Switching Diode High Voltage Switching Diode Chip ( Rev : 2004 )
Central Semiconductor
Switching Diode High Voltage Switching Diode Chip
Central Semiconductor
Switching Diode High Current Switching Diode Chip ( Rev : 2002 )
Central Semiconductor
Switching Diode High Speed Switching Diode Chip
Central Semiconductor
Switching Diode High Current Switching Diode Chip
Central Semiconductor
Switching Diode High Speed Switching Diode Chip
Central Semiconductor
Switching Diode High Speed Switching Diode Chip ( Rev : 2005 )
Central Semiconductor
Switching Diode High Current Switching Diode Chip
Central Semiconductor
Switching Diode High Current Diode Chip
Central Semiconductor
High voltage switching diode
Cystech Electonics Corp.
