Номер в каталоге
CP764X
Компоненты Описание
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производитель
Central Semiconductor
CP764X Даташит - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 21.7 x 17.7 MILS
Die Thickness 5.5 MILS
Gate Bonding Pad Area 4.7 x 4.7 MILS
Source Bonding Pad Area 6.1 x 7.9 MILS
Top Side Metalization Al-Si - 35,000Å
Back Side Metalization Au - 12,000Å
Номер в каталоге
Компоненты Описание
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производитель
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