CP734V Даташит - Central Semiconductor
производитель

Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 19.7 x 19.7 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 4.0 x 4.0 MILS
Emitter Bonding Pad Area 4.7 x 4.7 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Номер в каталоге
Компоненты Описание
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производитель
Small Signal Transistors PNP - High Voltage Transistor Chip
Central Semiconductor
Small Signal Transistors PNP - High Voltage Transistor Chip ( Rev : 2005 )
Central Semiconductor
Small Signal Transistors PNP - High Voltage Transistor Chip
Central Semiconductor
Small Signal Transistors PNP - High Voltage Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - High Voltage Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - High Voltage Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - High Voltage Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - High Voltage Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor PNP - High Voltage Transistor Chip
Central Semiconductor
Small Signal Transistors PNP - High Current Transistor Chip
Central Semiconductor