CP630 Даташит - Central Semiconductor
производитель

Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 80 x 80 MILS
Die Thickness 8.0 MILS
Base Bonding Pad Area 18 x 27 MILS
Emitter Bonding Pad Area 34 x 34 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Pd/Ag - 20,000Å
Номер в каталоге
Компоненты Описание
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производитель
Power Transistor PNP - Darlington Chip
Central Semiconductor
Power Transistor PNP - Darlington Chip
Central Semiconductor
Power Transistor NPN - Silicon Darlington Transistor Chip
Central Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor