Номер в каталоге
CP588V
Компоненты Описание
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2 Pages
File Size
389.8 kB
производитель
Central Semiconductor
CP588V Даташит - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 14.6 x 14.6 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 3.9 x 3.9 MILS
Emitter Bonding Pad Area 5.5 x 5.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Номер в каталоге
Компоненты Описание
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производитель
Small Signal Transistor PNP - Low Noise Amplifier Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor NPN - Low Noise Amplifier Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor PNP - Darlington Transistor Chip ( Rev : 2002 )
Central Semiconductor
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