Номер в каталоге
CP357X
Компоненты Описание
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Central Semiconductor
CP357X Даташит - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Die Size 22 x 17 MILS
Die Thickness 5.9 MILS
Gate Bonding Pad Area 3.9 x 3.9 MILS
Source Bonding Pad Area 14 x 9 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Au - 12,000Å
Номер в каталоге
Компоненты Описание
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производитель
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