Номер в каталоге
CP327V
Компоненты Описание
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2 Pages
File Size
645.7 kB
производитель
Central Semiconductor
CP327V Даташит - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 23 x 23 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 4.7 x 4.7 MILS
Emitter Bonding Pad Area 4.7 x 4.7 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Au - 12,000Å
Номер в каталоге
Компоненты Описание
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производитель
Small Signal Transistor NPN - Silicon Darlington Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor PNP - Darlington Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor NPN - High Voltage Darlington Transistor Chip
Central Semiconductor
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