Номер в каталоге
CP323
Компоненты Описание
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производитель
Central Semiconductor
CP323 Даташит - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 26.8 x 26.8 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 4.2 x 4.2 MILS
Emitter Bonding Pad Area 4.3 x 4.3 MILS
Top Side Metalization Al -
Back Side Metalization Au - 18,000Å
Номер в каталоге
Компоненты Описание
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производитель
Small Signal Transistor NPN - Silicon Darlington Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor PNP - Darlington Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistor NPN - High Voltage Darlington Transistor Chip
Central Semiconductor
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