CP319(2003) Даташит - Central Semiconductor
производитель
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 87 x 87 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 24 x 15 MILS
Emitter Bonding Pad Area 38 x 16 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Ag - 11,000Å
Номер в каталоге
Компоненты Описание
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производитель
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