CP229 Даташит - Central Semiconductor
производитель
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 21.7 x 21.7 MILS
Die Thickness 8.7 MILS
Base Bonding Pad Area 3.2 MILS Diameter
Emitter Bonding Pad Area 3.4 x 3.4 MILS
Top Side Metalization Al - 10,000Å
Back Side Metalization Au - 10,000Å
Номер в каталоге
Компоненты Описание
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производитель
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