CP147 Даташит - Central Semiconductor
производитель

Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL BASE
Die Size 195 X 195 MILS
Die Thickness 12 MILS
Base Bonding Pad Area 29 X 29 MILS
Emitter Bonding Pad Area 61 X 35 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Au - Ni-6,000Å; Au-6,000Å
Номер в каталоге
Компоненты Описание
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производитель
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