datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  TriQuint Semiconductor  >>> CLY2 PDF

CLY2 Даташит - TriQuint Semiconductor

CLY2 image

Номер в каталоге
CLY2

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
8 Pages

File Size
89.8 kB

производитель
TriQuint
TriQuint Semiconductor 

Description
The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its easy matching and excellent linearity. The CLY2 exhibits +23.5 dBm output power with +3V Vds at 1.8 GHz with an associated gain of 14.5 dB. Power added efficiencies to 55% are achievable.


FEATUREs
• For frequencies up to 3 GHz
• Wide operating voltage range:  2 to 6 V
• POUT23.5 dBm typical at VD=3V, f=1.8GHz
• High efficiency: better than 55 %
• Nfmin 0.79 dB typical at 900 MHz
• Low Cost


APPLICATIONs
• Power Amplifiers for WLAN transceivers
• Driver Amplifiers for WLAN or mobile phone basestations
• Low Noise Amplifier for basestations and antenna amplifiers

Page Link's: 1  2  3  4  5  6  7  8 

Номер в каталоге
Компоненты Описание
View
производитель
High Gain GaAs Power FET
PDF
Excelics Semiconductor, Inc.
High Voltage - High Power GaAs FET
PDF
Eudyna Devices Inc
High Gain GaAs Power FET
PDF
Unspecified
High Voltage - High Power GaAs FET
PDF
Eudyna Devices Inc
L-Band High Power GaAs FET
PDF
Eudyna Devices Inc
L-Band High Power GaAs FET
PDF
Fujitsu
2W Packaged Self-Bias PHEMT GaAs Power FETs
PDF
Transcom, Inc.
5W Packaged Self-Bias PHEMT GaAs Power FETs
PDF
Unspecified
5 W Flange Ceramic Packaged GaAs Power FETs
PDF
Transcom, Inc.
1W Low-Cost Packaged PHEMT GaAs Power FETs
PDF
Unspecified

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]