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C4574 Даташит - Inchange Semiconductor
производитель

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
• High DC Current Gain
: hFE= 2000(Min) @ IC= 1.5A, VCE= 3V
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• High power switching applications
• Hammer driver,pulse motor driver applications
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производитель
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.