C2715 Даташит - Toshiba
производитель
Toshiba
High Frequency Amplifier Applications
• High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz)
• Recommended for FM IF, OSC stage and AM CONV. IF stage.
Номер в каталоге
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производитель
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
Unspecified
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
Unspecified
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)
KEC
