BUV22 Даташит - ON Semiconductor
производитель
ON Semiconductor
This device is designed for high speed, high current, high power applications.
FEATUREs
• High DC Current Gain:
hFE min = 20 at IC = 10 A
• Low VCE(sat), VCE(sat)
max = 1.0 V at IC = 10 A
• Very Fast Switching Times:
TF max = 0.35 s at IC = 20 A
• Pb−Free Package is Available*
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